METHOD FOR MANUFACTURING BONDED WAFER AND BONDED WAFER

Title:

METHOD FOR MANUFACTURING BONDED WAFER AND BONDED WAFER

Document Type and Number:

WIPO Patent Application WO/2006/092886

Kind Code:

A1

Abstract:

Disclosed is a method for manufacturing a bonded wafer which comprises a step for etching an oxide film in a terrace portion of the edge of a bonded wafer which is formed by bonding at least a base wafer and a bond wafer. This method for manufacturing a bonded wafer is characterized in that etching of the oxide film in the terrace portion is performed by spin etching while holding and rotating the bonded wafer. By this method, the oxide film formed in the terrace portion of the base wafer can be efficiently etched without etching the oxide film on the backside of the base wafer.

Inventors:

TAKEI TOKIO (JP)
YOSHIZAWA SIGEYUKI (JP)
MIYAZAKI SUSUMU (JP)
YOKOKAWA ISAO (JP)
NOTO NOBUHIKO (JP)

Application Number:

PCT/JP2005/020202

Publication Date:

September 08, 2006

Filing Date:

November 02, 2005

Export Citation:

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Assignee:

SHINETSU HANDOTAI KK (JP)
TAKEI TOKIO (JP)
YOSHIZAWA SIGEYUKI (JP)
MIYAZAKI SUSUMU (JP)
YOKOKAWA ISAO (JP)
NOTO NOBUHIKO (JP)

International Classes:

H01L21/02; H01L21/304; H01L21/306; H01L27/12

Foreign References:

JPH0917984A	1997-01-17
JPH02185032A	1990-07-19
JP2000124092A	2000-04-28
JP2000030995A	2000-01-28

Other References: