Title:
METHOD FOR MANUFACTURING GALLIUM NITRIDE QUANTUM DOTS DOPED WITH METAL IONS
Document Type and Number:
WIPO Patent Application WO/2020/075946
Kind Code:
A1
Abstract:
The present application relates to a method for manufacturing gallium nitride quantum dots and, more specifically, to a method for manufacturing gallium nitride quantum dots doped with metal ions by using a wet-based synthesis method whereby the fluorescence energy of pure gallium nitride can be lowered through the introduction of metal ions.
Inventors:
JEONG KWANG SEOB (KR)
CHOI YUN CHANG (KR)
CHOI YUN CHANG (KR)
Application Number:
PCT/KR2019/005472
Publication Date:
April 16, 2020
Filing Date:
May 08, 2019
Export Citation:
Assignee:
UNIV KOREA RES & BUS FOUND (KR)
International Classes:
C09K11/02; C01B21/06; C09K11/08; C09K11/62; B82Y20/00; B82Y30/00; B82Y40/00
Foreign References:
| KR101665450B1 | 2016-10-13 | |||
| KR20180033758A | 2018-04-04 | |||
| KR20090054410A | 2009-05-29 | |||
| KR20150045196A | 2015-04-28 |
Other References:
BHAT, S.V: "Synthesis and optical properties of In-doped GaN nanocrystals", SOLID STATE COMMUNICATIONS, vol. 141, 2007, pages 325 - 328, XP005809335, DOI: 10.1016/j.ssc.2006.11.013
Attorney, Agent or Firm:
DANA PATENT LAW FIRM (KR)
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