Title:
METHOD FOR MANUFACTURING GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2023/233781
Kind Code:
A1
Abstract:
Provided is a method for manufacturing a group III nitride single crystal substrate, the method making it possible to shorten the manufacturing time of a device and to suppress cracking or characteristic degradation during device manufacturing. This method for manufacturing a group III nitride single crystal substrate includes execution of: a support substrate preparation step for preparing a support substrate including a nitride ceramic; a planarization layer formation step for providing a planarizing layer on the upper surface of the support substrate; a seed crystal layer formation step for providing a seed crystal layer to the upper surface of the planarizing layer; an epitaxial deposition step for epitaxially growing the intended group III nitride single crystal on the upper surface of the seed crystal layer to form a composite substrate; and a separation step for removing at least one of the planarizing layer and the seed crystal layer, thereby separating the group III nitride single crystal substrate made of the group III nitride single crystal from the rest of the composite substrate.
Inventors:
KUBOTA YOSHIHIRO (JP)
Application Number:
PCT/JP2023/012426
Publication Date:
December 07, 2023
Filing Date:
March 28, 2023
Export Citation:
Assignee:
SHINETSU CHEMICAL CO (JP)
International Classes:
C30B29/38; C30B25/18; H01L21/205
Foreign References:
| JP2021195299A | 2021-12-27 | |||
| JP2014166953A | 2014-09-11 |
Attorney, Agent or Firm:
ORISAKA Shigeki (JP)
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