Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/011787
Kind Code:
A1
Abstract:
A method for manufacturing an MOSFET (100) is provided with: a step of forming a gate oxide film (91) on an active layer (7); a step of forming a gate electrode (93) on the gate oxide film (91); a step of forming a source contact electrode (92) in ohmic contact with the active layer (7); and a step of forming, after forming the source contact electrode (92), an interlayer insulating film (94) composed of silicon dioxide so as to cover the gate electrode (93). The step of forming the source contact electrode (92) includes a step of forming an aluminum-containing metal layer such that the metal layer is in contact with the active layer (7), and a step of alloying the metal layer.
Inventors:
HORII TAKU (JP)
MASUDA TAKEYOSHI (JP)
MASUDA TAKEYOSHI (JP)
Application Number:
PCT/JP2012/065569
Publication Date:
January 24, 2013
Filing Date:
June 19, 2012
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
HORII TAKU (JP)
MASUDA TAKEYOSHI (JP)
HORII TAKU (JP)
MASUDA TAKEYOSHI (JP)
International Classes:
H01L21/336; H01L21/28; H01L29/12; H01L29/417; H01L29/78
Domestic Patent References:
| WO2009128382A1 | 2009-10-22 | |||
| WO2009128419A1 | 2009-10-22 |
Foreign References:
| JPH07335873A | 1995-12-22 | |||
| JP2008078434A | 2008-04-03 | |||
| JPH0265138A | 1990-03-05 | |||
| JP2004096067A | 2004-03-25 |
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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Claims: