Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/025251
Kind Code:
A1
Abstract:
The present invention relates to a method for manufacturing a semiconductor device. A method for manufacturing a semiconductor device, according to one embodiment, may comprise the steps of: laminating a plurality of insulating layers and a plurality of sacrificial layers on a substrate; forming an opening penetrating the plurality of insulating layers and the plurality of sacrificial layers; forming a trench by removing the sacrificial layers; laminating a barrier layer inside the trench; laminating a first electrode layer on the barrier layer; laminating a dielectric layer on the first electrode layer; performing heat treatment on the dielectric layer; and laminating a second electrode layer on the dielectric layer.
Inventors:
KIM TAE JUNG (KR)
Application Number:
PCT/KR2023/010506
Publication Date:
February 01, 2024
Filing Date:
July 20, 2023
Export Citation:
Assignee:
HPSP CO LTD (KR)
International Classes:
H10B12/00; H01L29/40; H01L29/51
Foreign References:
| KR20180049594A | 2018-05-11 | |||
| KR20220034540A | 2022-03-18 | |||
| US20180130823A1 | 2018-05-10 | |||
| KR20200104075A | 2020-09-03 | |||
| US20200321444A1 | 2020-10-08 |
Attorney, Agent or Firm:
DAE-A INTELLECTUAL PROPERTY CONSULTING (KR)
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