Title:
METHOD FOR PREPARING SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2017/041339
Kind Code:
A1
Abstract:
Provided is a method for preparing a substrate, comprising the following steps: step I. depositing an amorphous silicon layer (12) on a base material (11); step II. depositing a silicon dioxide layer (17) having a first thickness (D1) on the amorphous silicon layer (12); and step III. etching the silicon dioxide layer (17) until the thickness (D1) thereof is reduced to a second thickness (D2). According to the method, the silicon dioxide layer (17) having a required thickness can be prepared on the amorphous silicon layer (12). When an excimer laser annealing is performed, the prepared silicon dioxide layer (17) can sufficiently suppress protuberance at the crystal boundary of a polycrystalline silicon layer (18), thereby enabling the roughness of a prepared semiconductor layer to be decreased.
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Inventors:
LI ZIJIAN (CN)
Application Number:
PCT/CN2015/091471
Publication Date:
March 16, 2017
Filing Date:
October 08, 2015
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECT (CN)
WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD (CN)
WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD (CN)
International Classes:
H01L21/02; H01L21/31
Foreign References:
| CN104167349A | 2014-11-26 | |||
| CN203690350U | 2014-07-02 | |||
| CN100485889C | 2009-05-06 | |||
| CN102655089A | 2012-09-05 | |||
| CN101561598A | 2009-10-21 | |||
| US20070207487A1 | 2007-09-06 |
Attorney, Agent or Firm:
YUHONG INTELLECTUAL PROPERTY LAW FIRM (CN)
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