METHOD FOR PRODUCING ELECTRONIC DEVICE

WIPO Patent Application WO/2004/012012

A1

When the accuracy required for the dimensions of semiconductor circuit pattern approaches the molecular size of resist as the pattern becomes finer, device performance deteriorates due to edge roughness of the resist pattern to have an adverse effect on the system performance. This problem is solved by employing supermolecules having smaller dimensions than those of conventional polymer as a principle component, making the number of reactions required for molecular solubility variation constant and as large as possible, and increasing the acid catalyst density by including an acid generating agent in the supermolecule or bonding the acid generating agent thereto. A pattern of molecular accuracy can thereby be formed with high productivity even for the pattern dimension of 50 nm or less and a high performance system can be realized.

FUKUDA HIROSHI (JP)
YOKOYAMA YOSHIYUKI (JP)
HATTORI TAKASHI (JP)
SAKAMIZU TOSHIO (JP)
ARAI TADASHI (JP)
SHIRAISHI HIROSHI (JP)

PCT/JP2002/007760

February 05, 2004

July 30, 2002

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HITACHI LTD (JP)
FUKUDA HIROSHI (JP)
YOKOYAMA YOSHIYUKI (JP)
HATTORI TAKASHI (JP)
SAKAMIZU TOSHIO (JP)
ARAI TADASHI (JP)
SHIRAISHI HIROSHI (JP)

G03F7/004; G03F7/038; G03F7/039; G03F7/075; (IPC1-7): G03F7/039; G03F1/08; G03F7/004; H01L21/027; H01L21/3213

JPH10310545A	1998-11-24
US6197473B1	2001-03-06
JPH11109613A	1999-04-23
JPH11322656A	1999-11-24
JP2000352821A	2000-12-19
JP2001255655A	2001-09-21
JP2001235861A	2001-08-31
JPH0452648A	1992-02-20
JPH08222508A	1996-08-30
JP2000089464A	2000-03-31
US20020081501A1	2002-06-27

Ogawa, Katsuo (Yusenkayabacho Building 9-8, Nihonbashi-kayabacho 2-chom, Chuo-ku Tokyo, JP)

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