Title:
METHOD FOR PRODUCING METAL OXIDE SEMICONDUCTOR FILM, METAL OXIDE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/067799
Kind Code:
A1
Abstract:
Provided are: a method for producing a metal oxide semiconductor film, which is capable of simply forming an oxide semiconductor film having high semiconductor characteristics at low temperatures and at atmospheric pressure with use of a low-cost material containing no indium that is a rare metal; a metal oxide semiconductor film; a thin film transistor; and an electronic device. This method for producing a metal oxide semiconductor film comprises: a metal oxide semiconductor precursor film formation step wherein a metal oxide semiconductor precursor film is formed by applying a solution, which contains zinc and tin serving as metal components and a solvent, to a substrate; and a conversion step wherein the metal oxide semiconductor precursor film is converted into a metal oxide semiconductor film by irradiating the metal oxide semiconductor precursor film with ultraviolet light, while heating the metal oxide semiconductor precursor film. Not less than 80% of all the metal components in the metal oxide semiconductor precursor film is composed of zinc and tin, and the composition ratio of zinc and tin satisfies 0.7 ≤ Sn/(Sn + Zn) ≤ 0.9.
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Inventors:
TAKATA MASAHIRO (JP)
Application Number:
PCT/JP2015/077296
Publication Date:
May 06, 2016
Filing Date:
September 28, 2015
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
H01L21/368; G02F1/1368; H01L21/28; H01L21/336; H01L29/786; H01L51/50; H05B33/14
Foreign References:
| JP2014516453A | 2014-07-10 | |||
| JP2013531383A | 2013-08-01 | |||
| JP2010258057A | 2010-11-11 | |||
| JP2012253331A | 2012-12-20 |
Attorney, Agent or Firm:
WATANABE Mochitoshi et al. (JP)
Mochitoshi Watanabe (JP)
Mochitoshi Watanabe (JP)
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