Title:
METHOD FOR PRODUCING TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2012/023387
Kind Code:
A1
Abstract:
Provided is a method for producing, at a good yield, a high-precision, high-quality transistor by selectively etching a dummy gate formed from a natural silicon oxide film and, in addition, silicon. The method for producing the transistor is characterized by using a structure that comprises: a dummy gate laminate formed by laminating, on a substrate, at least a high dielectric material film and a dummy gate which is formed from silicon and has a natural silicon oxide film on the surface of the dielectric material film; side walls disposed so as to cover the side surfaces of the laminate; and an interlayer insulation film disposed so as to cover the side walls, is characterized by having an etching step that uses a predetermined etching solution, and is characterized by substituting the dummy gate with an aluminum metal gate.
Inventors:
SHIMADA KENJI (JP)
MATSUNAGA HIROSHI (JP)
ABE KOJIRO (JP)
YAMADA KENJI (JP)
MATSUNAGA HIROSHI (JP)
ABE KOJIRO (JP)
YAMADA KENJI (JP)
Application Number:
PCT/JP2011/066996
Publication Date:
February 23, 2012
Filing Date:
July 26, 2011
Export Citation:
Assignee:
MITSUBISHI GAS CHEMICAL CO (JP)
SHIMADA KENJI (JP)
MATSUNAGA HIROSHI (JP)
ABE KOJIRO (JP)
YAMADA KENJI (JP)
SHIMADA KENJI (JP)
MATSUNAGA HIROSHI (JP)
ABE KOJIRO (JP)
YAMADA KENJI (JP)
International Classes:
H01L21/306; H01L21/28; H01L21/308; H01L21/336; H01L21/8234; H01L27/088; H01L29/423; H01L29/49; H01L29/78
Foreign References:
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| JP2004221226A | 2004-08-05 | |||
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| JP2007214456A | 2007-08-23 | |||
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| JP2008047898A | 2008-02-28 | |||
| JPH10189722A | 1998-07-21 | |||
| US7316949B2 | 2008-01-08 | |||
| JP2004152862A | 2004-05-27 | |||
| JPH0917766A | 1997-01-17 | |||
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| JPH03219625A | 1991-09-27 | |||
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Other References:
APPLIED PHYSICS, vol. 76, no. 9, 2007, pages 1006
COMPLETE COLLECTION OF MICRO-MACHINE/MEMS TECHNOLOGIES, 2003, pages 111
COMPLETE COLLECTION OF MICRO-MACHINE/MEMS TECHNOLOGIES, 2003, pages 111
Attorney, Agent or Firm:
OHTANI, Tamotsu et al. (JP)
Tamotsu Otani (JP)
Tamotsu Otani (JP)
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Claims: