Title:
METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR COMPONENT, IN PARTICULAR A SOLAR CELL, ON THE BASIS OF A THIN SILICON LAYER
Document Type and Number:
WIPO Patent Application WO/2010/034725
Kind Code:
A4
Abstract:
A method for the production of a semiconductor component, in particular a solar cell, on the basis of a silicon thin film. A method is proposed for the production of a solar cell on the basis of a silicon thin film (5). The method presents: preparing of a silicon substrate (1); forming of a porous layer (3) at a surface of the silicon substrate (1); depositing of a silicon thin film (5) on the porous layer (3); and separating of the thin silicon layer (5) from the silicon substrate (1), with the porous layer (3) serving as a preset breaking point. The porous layer (3) is formed here by currentless chemical etching of the silicon substrate (1). By dispensing with conventionally used anodic etching and replacing with currentless chemical etching, the production process can be simplified considerably.
Inventors:
HENSEN JAN (DE)
WOLF ANDREAS (DE)
TERHEIDEN BARBARA (DE)
WOLF ANDREAS (DE)
TERHEIDEN BARBARA (DE)
Application Number:
PCT/EP2009/062286
Publication Date:
November 11, 2010
Filing Date:
September 22, 2009
Export Citation:
Assignee:
INST SOLARENERGIEFORSCHUNG (DE)
HENSEN JAN (DE)
WOLF ANDREAS (DE)
TERHEIDEN BARBARA (DE)
HENSEN JAN (DE)
WOLF ANDREAS (DE)
TERHEIDEN BARBARA (DE)
International Classes:
H01L31/18
Attorney, Agent or Firm:
KÜHN, Ralph (Elisenhof Elisenstrasse 3, Munich, DE)
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