Title:
METHOD OF PROVIDING GALVANIC ISOLATION
Document Type and Number:
WIPO Patent Application WO/2011/139397
Kind Code:
A3
Abstract:
A method of forming a semiconductor wafer with galvanic isolation attaches a non-conductive wafer (120) to a silicon wafer (110) to form a hybrid wafer (130). After a number of hybrid wafers (130) have been formed, the hybrid wafers (130) are simultaneously wet etched to thin the non-conductive wafer (120) of each hybrid wafer (130). Following this, a number of high-voltage devices (136) are formed on the thinned non-conductive wafer (120) of each hybrid wafer (130). Once the high- voltage devices (136) have formed, the silicon wafer (110) of each hybrid wafer (130) is thinned or removed so that the hybrid wafer (130) is suitable for packaging.
Inventors:
HOPPER PETER J (US)
FRENCH WILLIAM (US)
FRENCH WILLIAM (US)
Application Number:
PCT/US2011/026474
Publication Date:
December 29, 2011
Filing Date:
February 28, 2011
Export Citation:
Assignee:
NAT SEMICONDUCTOR CORP (US)
International Classes:
H01L27/12
Foreign References:
| US20080299742A1 | 2008-12-04 | |||
| US20100038756A1 | 2010-02-18 | |||
| US20090047526A1 | 2009-02-19 | |||
| US20070249139A1 | 2007-10-25 | |||
| US20020084474A1 | 2002-07-04 |
Attorney, Agent or Firm:
PICKERING, Mark (San Rafael, CA, US)
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