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Title:
METHODS AND APPARATUS FOR ADJUSTING BEAM PARALLELISM IN ION IMPLANTERS
Document Type and Number:
WIPO Patent Application WO2002019374
Kind Code:
A3
Abstract:
Methods and apparatus for implanting ions in a workpiece, such as a semiconductor wafer, include generating an ion beam, measuring parallelism of the ion beam, adjusting the ion beam for a desired parallelism based on the measured parallelism, measuring a beam direction of the adjusted ion beam, orienting a workpiece at an implant angle referenced to the measured beam direction and performing an implant with the workpiece oriented at the implant angle referenced to the measured beam direction. The implant may be performed with a high degree of beam parallelism.

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Inventors:
OLSON JOSEPH C
RENAU ANTHONY
Application Number:
PCT/US2001/022392
Publication Date:
June 06, 2002
Filing Date:
July 13, 2001
Export Citation:
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Assignee:
VARIAN SEMICONDUCTOR EQUIPMENT (US)
International Classes:
H01J37/147; H01J37/317; H01L21/265; (IPC1-7): H01J37/304; H01J37/317; H01J37/147
Domestic Patent References:
WO2001027968A12001-04-19
WO2001004926A12001-01-18
Foreign References:
US6255662B12001-07-03
US5834786A1998-11-10
EP0975004A22000-01-26
US5126575A1992-06-30
US5350926A1994-09-27
US4922106A1990-05-01
US4021675A1977-05-03
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