Title:
METHODS AND APPARATUS FOR IN-SITU CHAMBER DRY CLEAN DURING PHOTOMASK PLASMA ETCHING
Document Type and Number:
WIPO Patent Application WO/2009/158311
Kind Code:
A3
Abstract:
Embodiments of the invention include method for in-situ chamber dry clean after photomask plasma etching. In one embodiment, the method includes placing a photomask upon a support pedestal, introducing a process gas into a process chamber, forming a plasma from the process gas, etching a chromium containing layer disposed on the photomask in the presence of the plasma, removing the photomask from the support pedestal, placing a dummy substrate on the pedestal and performing an in-situ dry cleaning process by flowing a cleaning gas containing O2 through the process chamber while the dummy substrate is disposed on the support pedestal.
Inventors:
CHEN XIAOYI (US)
MAO ZHIGANG (US)
KNICK DAVID (US)
GRIMBERGEN MICHAEL (US)
BIVENS DARIN (US)
CHANDRAHOOD MADHAVI (US)
IBRAHIM IBRAHIM (SA)
KUMAR AJAY (UA)
MAO ZHIGANG (US)
KNICK DAVID (US)
GRIMBERGEN MICHAEL (US)
BIVENS DARIN (US)
CHANDRAHOOD MADHAVI (US)
IBRAHIM IBRAHIM (SA)
KUMAR AJAY (UA)
Application Number:
PCT/US2009/048162
Publication Date:
August 19, 2010
Filing Date:
June 22, 2009
Export Citation:
Assignee:
APPLIED MATERIALS INC (US)
CHEN XIAOYI (US)
MAO ZHIGANG (US)
KNICK DAVID (US)
GRIMBERGEN MICHAEL (US)
BIVENS DARIN (US)
CHANDRAHOOD MADHAVI (US)
IBRAHIM IBRAHIM (SA)
KUMAR AJAY (UA)
CHEN XIAOYI (US)
MAO ZHIGANG (US)
KNICK DAVID (US)
GRIMBERGEN MICHAEL (US)
BIVENS DARIN (US)
CHANDRAHOOD MADHAVI (US)
IBRAHIM IBRAHIM (SA)
KUMAR AJAY (UA)
International Classes:
H01L21/3065; H01L21/027
Foreign References:
| US20060191555A1 | 2006-08-31 | |||
| JP2000260749A | 2000-09-22 | |||
| US20040099634A1 | 2004-05-27 |
Attorney, Agent or Firm:
PATTERSON, B. Todd @ (L.L.P.3040 Post Oak Blvd., Suite 150, Houston TX, US)
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