Title:
METHODS OF OPERATING 3D MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/034091
Kind Code:
A1
Abstract:
Three-dimensional memory device architectures and methods of operating the devices therefore. A method of erasing memory cells of a memory device includes applying a first voltage greater than 10V to a first semiconductor layer of one or more first vertical structures. The method further includes applying a second voltage greater than 10V to a second semiconductor layer of one or more second vertical structures stacked over the one or more first vertical structures. The method also includes grounding each of a plurality of word lines. The plurality of word lines are arranged in an alternating stack with insulating layers over a substrate, and the one or more first vertical structures and the one or more second vertical structures extend through the alternating stack.
Inventors:
LIU JUN (CN)
Application Number:
PCT/CN2018/100445
Publication Date:
February 20, 2020
Filing Date:
August 14, 2018
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
G11C16/16
Domestic Patent References:
| WO2016069487A1 | 2016-05-06 | |||
| WO2017052700A1 | 2017-03-30 |
Foreign References:
| CN107851455A | 2018-03-27 | |||
| US20160314833A1 | 2016-10-27 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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