Title:
MILLIMETER WAVE AND FAR-INFRARED DETECTOR
Document Type and Number:
WIPO Patent Application WO/2001/006572
Kind Code:
A1
Abstract:
The invention provides a millimeter wave and far-infrared detector of extreme sensitivity and shorter response time. The detector comprises an input (1) for introducing incident millimeter wave or far-infrared radiation (2) to a detector antenna; a semiconductor substrate (4) on which is formed a single-electron transistor (14) for controlling the current penetrating a semiconductor quantum dot (12); and bow tie antennas (6, 6a, 6b, 6c) for concentrating millimeter wave or far-infrared radiation (2) onto a semiconductor quantum dot that define a submicron space in the single-electron transistor (14). The quantum dot forming a two-dimensional electron system efficiently absorbs the concentrated radiation and maintains the resulting excitation state for more than 10 nanoseconds so that more than 1,000,000 electrons can be transported for a single photon absorbed.
Inventors:
KOMIYAMA SUSUMU (JP)
OLEG ASTAFIEV (JP)
VLADMIR ANTONOV (JP)
HIRAI HIROSHI (JP)
KUTSUWA TAKESHI (JP)
OLEG ASTAFIEV (JP)
VLADMIR ANTONOV (JP)
HIRAI HIROSHI (JP)
KUTSUWA TAKESHI (JP)
Application Number:
PCT/JP2000/004540
Publication Date:
January 25, 2001
Filing Date:
July 07, 2000
Export Citation:
Assignee:
JAPAN SCIENCE & TECH CORP (JP)
KOMIYAMA SUSUMU (JP)
OLEG ASTAFIEV (JP)
VLADMIR ANTONOV (JP)
HIRAI HIROSHI (JP)
KUTSUWA TAKESHI (JP)
KOMIYAMA SUSUMU (JP)
OLEG ASTAFIEV (JP)
VLADMIR ANTONOV (JP)
HIRAI HIROSHI (JP)
KUTSUWA TAKESHI (JP)
International Classes:
G01J1/02; G01J5/10; G01J5/20; H01L29/06; G01R29/08; H01L29/66; H01L29/80; H01L31/02; H01L31/0232; H01L31/0352; H01L31/101; H01Q9/28; H01L31/0304; (IPC1-7): H01L31/09; G01J1/44; G01J1/02
Foreign References:
| JPH114017A | 1999-01-06 | |||
| JPH0851232A | 1996-02-20 |
Other References:
R.J. SCHOELKOPF ET AL.: "A concept for a supermillimeter-wave single photon counter", IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, vol. 9, no. 2, June 1999 (1999-06-01), pages 2935 - 2939, XP002930181
A.N. CLELAND ET AL.: "Very low noise photodetector based on the single electron transistor", APPLIED PHYSICS LETTERS, vol. 61, no. 23, 7 December 1992 (1992-12-07), pages 2820 - 2822, XP002930182
A.N. CLELAND ET AL.: "Very low noise photodetector based on the single electron transistor", APPLIED PHYSICS LETTERS, vol. 61, no. 23, 7 December 1992 (1992-12-07), pages 2820 - 2822, XP002930182
Attorney, Agent or Firm:
Hirayama, Kazuyuki (Shinjuku 2-chome Shinjuku-ku Tokyo, JP)
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