MOBILITY TRANSISTOR AND METHOD FOR MANUFACTURING SAME

WIPO Patent Application WO/2018/110833

A1

The present invention relates to a high electron mobility transistor and a method for manufacturing same. The high electron mobility transistor comprises: a channel layer, a barrier layer and a protection layer sequentially stacked on the upper part of a substrate; and a source electrode, a drain electrode and a gate electrode making contact with a lower layer of the protection layer, the lower layer being exposed via an opening part of the protection layer. The high electron mobility transistor comprises: a passivation layer positioned on the upper front surface of the gate electrode and the protection layer so as to expose the upper parts of the source electrode and the drain electrode; a source electrode pad and a drain electrode pad respectively positioned on the upper parts of the source electrode and the drain electrode; and an electroplating field plate connected to the source electrode pad so as to extend towards the passivation layer on the gate electrode.

LEE SANG MIN (KR)
CHOI CHUL SOON (KR)
SONG MYOUNG KEUN (KR)
JUNG YOUN KOOK (KR)
KOO HWANG SUB (KR)
KIM HYUN JE (KR)
JUNG HEE SEOK (KR)

PCT/KR2017/012444

June 21, 2018

November 03, 2017

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WAVICE INC (KR)

H01L29/778; H01L21/027; H01L21/28; H01L21/288; H01L21/768; H01L29/40

KR20030048685A	2003-06-25
JP2015111670A	2015-06-18
KR20110137809A	2011-12-23
KR20070019641A	2007-02-15
JP2011249439A	2011-12-08

B&IP-JOOWON PATENT AND LAW FIRM (KR)

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