Title:
MULTI-DIVISION 3D NAND MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/029216
Kind Code:
A1
Abstract:
A method for forming a staircase structure of 3D memory is provided. The method includes providing a substrate, forming an alternating layer stack over the substrate, forming a plurality of block regions over a surface of the alternating layer stack, forming a first plurality of staircase structures to expose a portion of a first number of top-most layer stacks at each of the block regions (102, 104, 106…) and removing the first number of the layer stacks at a second plurality of staircase structures at each of the block regions (102, 104, 106…).
Inventors:
ZHANG ZHONG (CN)
LI YAN NI (CN)
LI YAN NI (CN)
Application Number:
PCT/CN2018/099792
Publication Date:
February 13, 2020
Filing Date:
August 10, 2018
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L27/115
Foreign References:
| CN106098693A | 2016-11-09 | |||
| CN106252355A | 2016-12-21 | |||
| US20150137205A1 | 2015-05-21 | |||
| CN105074923A | 2015-11-18 | |||
| US20110121403A1 | 2011-05-26 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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