Title:
NITRIDE-BASED SEMICONDUCTORDEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2024/026597
Kind Code:
A1
Abstract:
A nitride-based semiconductor deviceincludes a first and a second nitride-based semiconductor layers, a source and a drain electrodes, a doped nitride-based semiconductor layer, and a gate electrode. The source electrode is disposed over the second nitride-based semiconductor layer and includes a first and a second conductive layers. The drain electrode is disposed over the second nitride-based semiconductor layer and includes a third and a fourth conductive layers. The doped nitride-based semiconductor layer is disposed over the second nitride-based semiconductor layer and between the source electrode and the drain electrode. The gate electrode is disposed over the doped nitride-based semiconductor layer and between the source electrode and the drain electrode and includes a fifth and a sixth conductive layers. The second, fourth, and sixth conductive layers have the same material.
Inventors:
MA JUNHUI (CN)
YOU JHENG-SHENG (CN)
CHANG MING-HONG (CN)
YOU JHENG-SHENG (CN)
CHANG MING-HONG (CN)
Application Number:
PCT/CN2022/109336
Publication Date:
February 08, 2024
Filing Date:
July 31, 2022
Export Citation:
Assignee:
INNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L29/778; H01L29/66
Foreign References:
| US20200176595A1 | 2020-06-04 | |||
| CN114068711A | 2022-02-18 | |||
| CN113140630A | 2021-07-20 | |||
| CN106537560A | 2017-03-22 | |||
| US20170104091A1 | 2017-04-13 | |||
| CN114783866A | 2022-07-22 | |||
| JP2009054623A | 2009-03-12 |
Attorney, Agent or Firm:
BEIJING BESTIPR INTELLECTUAL PROPERTY LAW CORPORATION (CN)
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