Title:
OPTICAL SEMICONDUCTOR DEVICE COMPRISING A MULTIPLE QUANTUM WELL STRUCTURE
Document Type and Number:
WIPO Patent Application WO2001039282
Kind Code:
A3
Abstract:
The invention relates to an optical semiconductor device comprising a multiple quantum well structure, in which well layers and barrier layers consisting of different types of semiconductor layers are stacked alternately on top of one another. The invention is characterised in that the well layers (6a) have a first composition, based on a nitride semiconductor material with a first electron energy and the barrier layers (6b) have a second composition based on a nitride semiconductor material with a higher electron energy in relation to the first electron energy. An active radiative quantum well layer (6c) is located downstream of said layers in the epitaxial direction and the essentially non-radiative well layers (6a) positioned upstream, together with the barrier layers (6b) form a superlattice for said active quantum well layer.
Inventors:
HAERLE VOLKER (DE)
HAHN BERTHOLD (DE)
LUGAUER HANS-JUERGEN (DE)
BOLAY HELMUT (DE)
BADER STEFAN (DE)
EISERT DOMINIK (DE)
STRAUSS UWE (DE)
VOELKL JOHANNES (DE)
ZEHNDER ULRICH (DE)
LELL ALFRED (DE)
WEIMAR ANDREAS (DE)
HAHN BERTHOLD (DE)
LUGAUER HANS-JUERGEN (DE)
BOLAY HELMUT (DE)
BADER STEFAN (DE)
EISERT DOMINIK (DE)
STRAUSS UWE (DE)
VOELKL JOHANNES (DE)
ZEHNDER ULRICH (DE)
LELL ALFRED (DE)
WEIMAR ANDREAS (DE)
Application Number:
PCT/DE2000/004089
Publication Date:
December 06, 2001
Filing Date:
November 20, 2000
Export Citation:
Assignee:
OSRAM OPTO SEMICONDUCTORS GMBH (DE)
HAERLE VOLKER (DE)
HAHN BERTHOLD (DE)
LUGAUER HANS JUERGEN (DE)
BOLAY HELMUT (DE)
BADER STEFAN (DE)
EISERT DOMINIK (DE)
STRAUSS UWE (DE)
VOELKL JOHANNES (DE)
ZEHNDER ULRICH (DE)
LELL ALFRED (DE)
WEIMAR ANDREAS (DE)
HAERLE VOLKER (DE)
HAHN BERTHOLD (DE)
LUGAUER HANS JUERGEN (DE)
BOLAY HELMUT (DE)
BADER STEFAN (DE)
EISERT DOMINIK (DE)
STRAUSS UWE (DE)
VOELKL JOHANNES (DE)
ZEHNDER ULRICH (DE)
LELL ALFRED (DE)
WEIMAR ANDREAS (DE)
International Classes:
H01L33/06; H01L33/32; H01S5/343; H01S5/34; (IPC1-7): H01L33/00
Domestic Patent References:
| WO1998031055A1 | 1998-07-16 |
Foreign References:
| US5831277A | 1998-11-03 | |||
| EP0731510A2 | 1996-09-11 | |||
| EP0908988A2 | 1999-04-14 | |||
| US5684309A | 1997-11-04 | |||
| EP0833395A2 | 1998-04-01 |
Other References:
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 14 31 December 1998 (1998-12-31)
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