Title:
OXIDE FILM AND OXIDE SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2023/132144
Kind Code:
A1
Abstract:
The present disclosure addresses the problem of providing an oxide film having a low carrier concentration and high carrier mobility, and an oxide sputtering target suitable for forming said oxide film. Provided is an oxide film containing zinc (Zn), tin (Sn), aluminum (Al), and oxygen (O), the oxide film being characterized by satisfying expressions (1) through (3). In the expressions, Al, Sn, and Zn represent the atomic ratios of each respective element in the oxide film. (1): 3 × Sn/Zn < Al. (2): Al/(Al + Sn + Zn) ≤ 0.10. (3): 0.33 ≤ Sn/(Sn + Zn) ≤ 0.60.
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Inventors:
YAMAMOTO HIROYOSHI (JP)
NARA ATSUSHI (JP)
NARA ATSUSHI (JP)
Application Number:
PCT/JP2022/043060
Publication Date:
July 13, 2023
Filing Date:
November 21, 2022
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
C23C14/08; C23C14/34
Foreign References:
| JP2012066968A | 2012-04-05 | |||
| JP2012033854A | 2012-02-16 | |||
| JPH0935535A | 1997-02-07 | |||
| JP2007223899A | 2007-09-06 | |||
| JP2014240525A | 2014-12-25 |
Other References:
CHANG CHIH-HSIANG, LIU PO-TSUN: "Investigation on plasma treatment for transparent Al–Zn–Sn–O thin film transistor application", THIN SOLID FILMS, ELSEVIER, AMSTERDAM, NL, vol. 549, 31 December 2013 (2013-12-31), AMSTERDAM, NL , pages 36 - 41, XP055935401, ISSN: 0040-6090, DOI: 10.1016/j.tsf.2013.06.042
Attorney, Agent or Firm:
IP FIRM SHUWA (JP)
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