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Title:
PHOTODETECTION DEVICE AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2023/084989
Kind Code:
A1
Abstract:
Provided is a feature for improving production yield. This photodetection device is provided with: a semiconductor layer having a first surface and a second surface positioned on opposite sides of each other in the thickness direction; a separation region provided to the semiconductor layer and extending in the thickness direction of the semiconductor layer; a photoelectric conversion region divided by the separation region; a conductor provided to the separation region and extending in the thickness direction of the semiconductor layer; a relay electroconductive pad formed wider than the width of the conductor and connected so as to overlap the conductor in plan view on the first surface side of the semiconductor layer; and, a contact part connected so as to overlap the relay electroconductive pad in plan view.

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Inventors:
NISHIDA KEIJI (JP)
Application Number:
PCT/JP2022/038228
Publication Date:
May 19, 2023
Filing Date:
October 13, 2022
Export Citation:
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Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L27/146; H01L21/76; H04N25/76
Domestic Patent References:
WO2019093150A12019-05-16
WO2021100826A12021-05-27
WO2019203085A12019-10-24
Foreign References:
JP2018088488A2018-06-07
JP2021005654A2021-01-14
US20170170229A12017-06-15
Attorney, Agent or Firm:
TANAKA Hidetetsu et al. (JP)
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