Title:
PHOTODETECTOR ELEMENT, IMAGE SENSOR, AND METHOD FOR MANUFACTURING PHOTODETECTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2023/234094
Kind Code:
A1
Abstract:
Provided are a photodetector element, an image sensor, and a method for manufacturing the photodetector element. The photodetector element comprises: a photoelectric conversion element (10); an optical filter (30) disposed on a light incidence side of the photoelectric conversion element (10); and an intermediate layer (20) disposed between the photoelectric conversion element (10) and the optical filter (30), wherein the photoelectric conversion element (10) has a quantum dot layer (13), a first electrode (11), and a second electrode (12), the optical filter (30) has predetermined spectral properties, and the intermediate layer (20) contains at least one atom selected from the group consisting of Si, Al, Zr, Sn, Zn, Ce, and Hf, or contains a paraxylene polymer, or has a water vapor permeability of 1×10-4 g/m2/day or less as determined by a method according to JIS K 7129.
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Inventors:
GOTO TAKASHI (JP)
MIYATA TETSUSHI (JP)
MIYATA TETSUSHI (JP)
Application Number:
PCT/JP2023/018903
Publication Date:
December 07, 2023
Filing Date:
May 22, 2023
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
H01L31/0232; G01J1/02; G02B5/20; G02B5/22; G02B5/28; H01L27/146; H01L31/10
Domestic Patent References:
| WO2020241535A1 | 2020-12-03 | |||
| WO2021002104A1 | 2021-01-07 | |||
| WO2022045113A1 | 2022-03-03 |
Foreign References:
| JP2016072389A | 2016-05-09 | |||
| JP2008252004A | 2008-10-16 | |||
| US20150003777A1 | 2015-01-01 | |||
| JP2014157340A | 2014-08-28 | |||
| JP2013034123A | 2013-02-14 | |||
| JP2022055214A | 2022-04-07 | |||
| JP2018087956A | 2018-06-07 |
Attorney, Agent or Firm:
SIKS & CO. (JP)
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