Title:
PHOTODETECTOR, OPTICAL RECEIVING MODULE AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/093559
Kind Code:
A1
Abstract:
A photodetector (7), an optical receiving module (23) and an electronic device. The photodetector (7) comprises a hybrid substrate of bulk silicon and silicon-on-insulator; a transistor is formed on a silicon-on-insulator substrate; a first photodiode and a second photodiode are formed on a bulk silicon substrate; the first photodiode comprises a first electrode doped region (703) and a first well region (702); a gate (712) serves as a first gate of the transistor; a semiconductor substrate (701) serves as a second gate of the transistor; the first electrode doped region (703) of the first photodiode is electrically connected to the gate (712) of the transistor; the semiconductor substrate (701) and the first well region (702) form a PN junction, such that the second photodiode is formed. Such configuration not only enhances the absorption of incident light to obtain the relatively high quantum efficiency and sensitivity, but also can improve the photoelectric responsivity, and reduce the leakage current and the parasitic capacitance, thereby reducing the power consumption.
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Inventors:
WAN JING (CN)
ZHANG WEI (CN)
FENG BO (CN)
HUANG DONG (CN)
ZHANG WEI (CN)
FENG BO (CN)
HUANG DONG (CN)
Application Number:
PCT/CN2023/120098
Publication Date:
May 10, 2024
Filing Date:
September 20, 2023
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L27/06; H01L21/8234; H04B10/69
Foreign References:
CN116598322A | 2023-08-15 | |||
CN112510058A | 2021-03-16 | |||
CN103460688A | 2013-12-18 | |||
CN109728019A | 2019-05-07 | |||
CN112382639A | 2021-02-19 | |||
CN112397532A | 2021-02-23 | |||
US20140284610A1 | 2014-09-25 |
Attorney, Agent or Firm:
BEIJING ZBSD PATENT & TRADEMARK AGENT LTD. (CN)
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