PN JUNCTION ELEMENT AND ELECTRONIC DEVICE USING SAME

Title:

PN JUNCTION ELEMENT AND ELECTRONIC DEVICE USING SAME

Document Type and Number:

WIPO Patent Application WO/2017/073915

Kind Code:

A1

Abstract:

Provided are a transparent PN junction element and an electronic device using the same. The PN junction element comprises: a support substrate; a copper chloride (CuCl) thin film layer; a transparent electrode layer; and first and second electrodes. The copper chloride thin film layer is formed on the support substrate and functions as a P-type semiconductor layer. The transparent electrode layer is formed on the copper chloride thin film layer and functions as an N-type semiconductor layer. The first electrode is formed on the copper chloride thin film layer. The second electrode is formed on the transparent electrode layer. Further, the transparent electrode layer may comprise indium tin oxide (ITO) or indium zinc oxide (IZO).

Inventors:

AHN DO YEOL (KR)
PARK SANG JOON (KR)
SONG JIN DONG (KR)
YANG SEONG HYUN (KR)

Application Number:

PCT/KR2016/010956

Publication Date:

May 04, 2017

Filing Date:

September 30, 2016

Export Citation:

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Assignee:

PETALUX INC (KR)

International Classes:

H01L31/0392; H01L21/761; H01L29/06; H01L31/0224; H01L31/05; H05B33/14

Foreign References:

KR20050023840A	2005-03-10
KR20130063165A	2013-06-14
KR20140003124A	2014-01-09
KR20120057646A	2012-06-05
KR101047476B1	2011-07-07

Other References: