Title:
POLISHING COMPOSITION CONTAINING AMPHOTERIC SURFACTANT
Document Type and Number:
WIPO Patent Application WO/2018/193916
Kind Code:
A1
Abstract:
[Problem] To provide: a polishing composition which, when used in a wafer polishing step, gives a flat polished surface having a small difference in surface level between the central part and peripheral part (laser mark part) of the wafer; and a method for producing a wafer using the polishing composition. [Solution] A polishing composition which comprises water, silica particles, an alkaline substance, and an amphoteric surfactant represented by formula (1), wherein the silica particles are the silica particles of an aqueous dispersion of silica particles having an average primary-particle diameter of 5-100 nm; and a wafer production method comprising a wafer polishing step in which a wafer is polished until the difference in surface level between the central part and peripheral part of the wafer becomes 100 nm or smaller. (In formula (1), R1 is a C10-20 alkyl group or an amidated C1-5 alkyl group; R2 and R3 are each independently a C1-9 alkyl group; and X- is a C1-5 anionic organic group including a carboxylic acid ion or sulfonic acid ion.)
Inventors:
SAKAIDA HIROAKI (JP)
ISHIMIZU EIICHIRO (JP)
ISHIMIZU EIICHIRO (JP)
Application Number:
PCT/JP2018/015089
Publication Date:
October 25, 2018
Filing Date:
April 10, 2018
Export Citation:
Assignee:
NISSAN CHEMICAL CORP (JP)
International Classes:
C09K3/14; B24B37/00; C09G1/02; H01L21/304
Domestic Patent References:
| WO2016132951A1 | 2016-08-25 |
Foreign References:
| JP2009187986A | 2009-08-20 | |||
| JP2013251561A | 2013-12-12 | |||
| JP2016194006A | 2016-11-17 | |||
| JP2017190363A | 2017-10-19 | |||
| JP2004204098A | 2004-07-22 | |||
| JP2004247542A | 2004-09-02 |
Other References:
See also references of EP 3613822A4
Attorney, Agent or Firm:
HANABUSA PATENT & TRADEMARK OFFICE (JP)
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