Title:
POLYCRYSTALLINE SIC MOLDED ARTICLE AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2024/024218
Kind Code:
A1
Abstract:
The present invention provides: a polycrystalline SiC molded article that has low resistivity and little variation in resistivity in the thickness direction thereof; and a method for producing the polycrystalline SiC molded article. The polycrystalline SiC molded article has a resistivity or not more than 0.050 Ωcm. When "A" is defined as the peak intensity in the range of a wavenumber of 950-970 cm-1 in a Raman spectrum, and "B" is defined as the peak intensity in the range of a wavenumber of 780-800 cm-1 in a Raman spectrum, the average value of a peak intensity ratio (A/B) is not more than 0.040. The difference between the average peak intensity ratio of a growth face side and the average peak intensity ratio of a substrate face side is not more than 0.040.
Inventors:
SUGIHARA TAKAOMI (JP)
USHIJIMA YUJI (JP)
USHIJIMA YUJI (JP)
Application Number:
PCT/JP2023/018125
Publication Date:
February 01, 2024
Filing Date:
May 15, 2023
Export Citation:
Assignee:
TOKAI CARBON KK (JP)
International Classes:
C23C16/42; C01B32/977
Foreign References:
| JP2021054667A | 2021-04-08 | |||
| JP2012136375A | 2012-07-19 | |||
| JP2021082765A | 2021-05-27 | |||
| JP2014031527A | 2014-02-20 |
Attorney, Agent or Firm:
TANAKA Shinichiro et al. (JP)
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