POWER SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2021/176540

A1

The present invention comprises: a semiconductor element (2) provided on a base plate (7); a connection terminal (8) connected to the semiconductor element (2); a case (9) provided so as to surround the semiconductor element; a shock-absorbing member (11) provided contacting the inner surface of the case (9) and having a concave/convex shape comprising longitudinal grooves extending in the vertical direction; and a silicone gel (10) sealed inside the case, the volume expansion rate of the shock-absorbing member (11) being between the volume expansion rate of the case (9) and that of the silicone gel (10), the degree of penetration of the shock-absorbing member (11) being greater than the degree of penetration of the silicone gel (10), and the corner parts of the concave/convex shape of the shock-absorbing member being rounded. The present invention makes it possible to obtain a power semiconductor device (1) in which, during heat cycling, boundary separation is prevented between the shock-absorbing member (11), and the case (9) and silicone gel (10), and discharge in the air is unlikely to occur.

WO/2023/175823	SEMICONDUCTOR DEVICE
JP2954583	INDUSTRIAL APPLICABILITY: Contact structure of lead end extending on the surface of an insulating layer

KISHIMOTO KOKI (JP)
TAJIRI KUNIHIKO (JP)
KADOWAKI KAZUTAKE (JP)
ISHIKAWA HIROTAKU (JP)

PCT/JP2020/008803

September 10, 2021

March 03, 2020

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MITSUBISHI ELECTRIC CORP (JP)

H01L25/07; H01L25/18

JP2015088499A	2015-05-07
JP2015162649A	2015-09-07

PALMO PATENT FIRM, P.C. (JP)

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