Title:
POWER SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/053439
Kind Code:
A1
Abstract:
The purpose of the present disclosure is to provide a power semiconductor device in which temperature-sensing diodes are built into trenches without any loss in function as an active gate. A power semiconductor device (101) comprises, in an active region (2): a p-type base layer (9) formed over an n-type drift layer (13); a plurality of n-type well regions (8) formed in a surface layer of the p-type base layer (9); and polysilicon layers (10, 11, 12) formed in trenches (17, 17A) with an insulating film therebetween. The polysilicon layers (10, 11) formed in at least one trench (17A) are provided with: an n-type polysilicon layer (10) connected to an emitter terminal (15) of a switching element (20); and a p-type polysilicon layer (11) that is connected to a gate terminal (14) of the switching element (20) and surrounds a surface of the n-type polysilicon layer (10) facing a side surface of the trench (17A).
More Like This:
| JP7459703 | semiconductor equipment |
| JP2008103508 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
| WO/2020/139969 | INTEGRATED VERTICAL AND LATERAL SEMICONDUCTOR DEVICES |
Inventors:
ATA YASUO (JP)
OSAGA TSUYOSHI (JP)
OSAGA TSUYOSHI (JP)
Application Number:
PCT/JP2021/036400
Publication Date:
April 06, 2023
Filing Date:
October 01, 2021
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L29/78; H01L29/739
Foreign References:
| JP2017174863A | 2017-09-28 | |||
| JP2013033931A | 2013-02-14 | |||
| JP2008235600A | 2008-10-02 | |||
| JP2013033970A | 2013-02-14 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
Download PDF: