Title:
POWER SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/111190
Kind Code:
A1
Abstract:
According to the present invention, a power conversion device is provided with: a plurality of upper arm-side power semiconductor elements and a plurality of lower arm-side power semiconductor elements; a first conductor and a second conductor, which are connected to the upper arm-side power semiconductor elements; and a third conductor and a fourth conductor, which are connected to the lower arm-side power semiconductor elements. An upper arm-side junction part is formed at a position that is at the same distance from the plurality of upper arm-side power semiconductor elements; a lower arm-side junction part is formed at a position that is at the same distance from the plurality of lower arm-side power semiconductor elements; and the upper arm-side junction part and the lower arm-side junction part are formed adjacent to each other in a region between the array of the plurality of upper arm-side power semiconductor elements and the array of the plurality of lower arm-side power semiconductor elements.
More Like This:
Inventors:
TANAKA SHINTARO (JP)
TOKUYAMA TAKESHI (JP)
NAGASAKI HIRONORI (JP)
ASAI KYOTA (JP)
SHIMURA TAKAHIRO (JP)
TOKUYAMA TAKESHI (JP)
NAGASAKI HIRONORI (JP)
ASAI KYOTA (JP)
SHIMURA TAKAHIRO (JP)
Application Number:
PCT/JP2023/030625
Publication Date:
May 30, 2024
Filing Date:
August 24, 2023
Export Citation:
Assignee:
HITACHI ASTEMO LTD (JP)
International Classes:
H01L25/18; H01L25/07
Domestic Patent References:
| WO2018020953A1 | 2018-02-01 | |||
| WO2019202866A1 | 2019-10-24 |
Foreign References:
| JP2022139064A | 2022-09-26 | |||
| JP2021184406A | 2021-12-02 |
Attorney, Agent or Firm:
SUNNEXT INTERNATIONAL PATENT OFFICE (JP)
Download PDF: