Title:
PROCESS FOR MANUFACTURE OF SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/086257
Kind Code:
A1
Abstract:
The ion implantation through a first opening formed on a mask layer (31) is carried out, thereby forming a first impurity region (123). A spacer layer (32) is deposited on an etching stop layer having a mask layer (31) provided therein, thereby forming a mask part (30) having the mask layer (31) and the spacer layer (32). The spacer layer (32) is etched anisotropically, thereby forming, on the mask part (30), a second opening (P2) that is surrounded by a second side wall. The ion implantation through the second opening (P2) is carried out, thereby forming a second impurity region (124). In the second side wall, the angle (AW) against the surface (SO) is 90˚ ± 10˚ in an area having a height (HT) that is the same as the second depth (D2). This configuration enables the improvement in accuracy of the spreading of the impurity regions.
Inventors:
OOI NAOKI (JP)
SHIOMI HIROMU (JP)
SHIOMI HIROMU (JP)
Application Number:
PCT/JP2011/068140
Publication Date:
June 28, 2012
Filing Date:
August 09, 2011
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
OOI NAOKI (JP)
SHIOMI HIROMU (JP)
OOI NAOKI (JP)
SHIOMI HIROMU (JP)
International Classes:
H01L21/336; H01L21/265; H01L21/28; H01L29/12; H01L29/78
Domestic Patent References:
| WO2010110252A1 | 2010-09-30 |
Foreign References:
| JPH10233503A | 1998-09-02 | |||
| JP2006237511A | 2006-09-07 | |||
| JP2004319964A | 2004-11-11 | |||
| JP2009177006A | 2009-08-06 | |||
| JP2010166024A | 2010-07-29 | |||
| JP2004207492A | 2004-07-22 | |||
| JP2010267767A | 2010-11-25 | |||
| JP2007273588A | 2007-10-18 | |||
| JP2010182762A | 2010-08-19 | |||
| JPH06151860A | 1994-05-31 |
Other References:
See also references of EP 2657959A4
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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Claims: