Title:
PROCESS FOR PRODUCING EPITAXIAL WAFER AND EPITAXIAL WAFER PRODUCED THEREFROM
Document Type and Number:
WIPO Patent Application WO/2007/032180
Kind Code:
A1
Abstract:
In a vapor-phase growth apparatus, epitaxial growth is carried out on a wafer having
a CVD film on its backside as a monitor wafer for resistance compensation and/or
thickness measurement of an epitaxial layer. Epitaxial growth is then carried
out on a dummy wafer, or alternatively a vapor-phase growth apparatus is operated
under epitaxial growth conditions without use of the wafer. Thereafter, epitaxial
growth is carried out on a wafer for a product to produce an epitaxial wafer. The
above constitution provides a production process that can effectively prevent
heavy metal contamination and can produce a high-quality epitaxial wafer in
the production of an epitaxial wafer for use in the production of image pickup
devices such as CCD or CMOS image sensors using a CVD film-free wafer.
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Inventors:
YOSHIDA TOMOSUKE (JP)
TODA NAOHISA (JP)
TODA NAOHISA (JP)
Application Number:
PCT/JP2006/316300
Publication Date:
March 22, 2007
Filing Date:
August 21, 2006
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
YOSHIDA TOMOSUKE (JP)
TODA NAOHISA (JP)
YOSHIDA TOMOSUKE (JP)
TODA NAOHISA (JP)
International Classes:
H01L21/205; C23C16/56; C30B23/00
Foreign References:
| JP2000286268A | 2000-10-13 | |||
| JP2002164286A | 2002-06-07 | |||
| JP2003151984A | 2003-05-23 | |||
| JP2001203164A | 2001-07-27 | |||
| JPS6419717A | 1989-01-23 | |||
| JP2003264277A | 2003-09-19 |
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (6-4 Motoasakusa 2-chome, Taito-k, Tokyo 41, JP)
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