PROCESS FOR PRODUCTION OF ALUMINUM-CONTAINING III NITRIDE SINGLE CRYSTAL

Title:

PROCESS FOR PRODUCTION OF ALUMINUM-CONTAINING III NITRIDE SINGLE CRYSTAL

Document Type and Number:

WIPO Patent Application WO/2012/081670

Kind Code:

A1

Abstract:

A process for producing an aluminum-containing III nitride single crystal, comprising: a reaction step of bringing a halogen gas and aluminum into contact with each other at a temperature of 300 to 700˚C inclusive, thereby producing a mixed gas comprising a gas of an aluminum trihalide and a gas of an aluminum monohalide; a conversion step of setting the temperature of the mixed gas at a temperature that is equal to or higher than a temperature at which a solid of the aluminum trihalide is precipitated and that is lower by 50˚C or more than a temperature at which the halogen gas and aluminum have been reacted with each other in the reaction step, thereby converting the aluminum monohalide in the mixed gas into a solid substance; a separation step of separating the solid substance from the gas, thereby removing the gas of the aluminum trihalide; and a crystal growth step of using the gas of the aluminum trihalide as an aluminum nitride single crystal raw material without lowering the temperature and while keeping the temperature at a temperature that is equal to or higher than the temperature employed in the conversion step.

More Like This:

WO/2000/035809	METHOD FOR PRODUCING MOLTEN SALTS WITH AN EXTRUDER AND USE OF THE MOLTEN SALTS
JP5859978	Method for producing aluminum-based group III nitride single crystal
WO/2024/065007	A METHOD FOR PRODUCING AN ALUMINOUS MATERIAL

Inventors:

NAGASHIMA TORU (JP)
HIRONAKA KEIICHIRO (JP)

Application Number:

PCT/JP2011/079060

Publication Date:

June 21, 2012

Filing Date:

December 15, 2011

Export Citation:

Click for automatic bibliography generation Help

Assignee:

TOKUYAMA CORP (JP)
NAGASHIMA TORU (JP)
HIRONAKA KEIICHIRO (JP)

International Classes:

C01F7/56; C30B29/38; C01F7/58; C01F7/62; C30B25/14; H01L21/205

Foreign References:

JP2003303774A	2003-10-24
US20080083970A1	2008-04-10
JPS4942599B1	1974-11-15
JP2003303774A	2003-10-24
JP2007042854A	2007-02-15

Other References: