PRODUCTION METHOD FOR BONDING WAFER AND BONDING WAFER PRODUCED BY THIS METHOD

Title:

PRODUCTION METHOD FOR BONDING WAFER AND BONDING WAFER PRODUCED BY THIS METHOD

Document Type and Number:

WIPO Patent Application WO/2001/073848

Kind Code:

A1

Abstract:

A production method for a bonding wafer, comprising an ion implanting step of forming a fine-bubble layer (implantation layer) inside of a first wafer by implanting at least one of hydrogen ions and rare gas ions from the surface of the first wafer, a close-contact step of bringing the ion-implanted surface of the first wafer into close contact with the surface of a second wafer, and a release step of releasing the first wafer at the fine-bubble layer by heat-treating the first wafer and the second wafer in close contact with each other, wherein ion implantation is carried out with a temperature of the first wafer kept at lower than 20?C in the ion implanting step. Accordingly, a production method for a bonding wafer is provided that can enhance productivity and reduce costs due to a smaller implantation dose necessary for releasing in an ion implantation/release method, and permits bonding without cracks in wafers otherwise caused by a lowered release temperature even when wafers of different thermal expansion coefficients are bonded.

Inventors:

ABE TAKAO (JP)
OHNUKI SOUMEI (JP)
SUZUKI SHYUICHI (JP)
YOKOKAWA ISAO (JP)

Application Number:

PCT/JP2001/002235

Publication Date:

October 04, 2001

Filing Date:

March 21, 2001

Export Citation:

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Assignee:

SHINETSU HANDOTAI KK (JP)
ABE TAKAO (JP)
OHNUKI SOUMEI (JP)
SUZUKI SHYUICHI (JP)
YOKOKAWA ISAO (JP)

International Classes:

C30B29/06; C23C14/48; C30B33/06; H01L21/02; H01L21/265; H01L21/762; H01L27/12; (IPC1-7): H01L27/12

Foreign References:

EP0961312A2	1999-12-01
JPH10335616A	1998-12-18
JPH09162136A	1997-06-20
EP0917193A1	1999-05-19

Other References: