Title:
PURGING METHOD FOR SEMICONDUCTOR PRODUCTION DEVICE AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2003/019634
Kind Code:
A1
Abstract:
A purging method for a semiconductor production device comprising the step of etching, by a cleaning gas containing at least halogen gas, a CVD deposit film deposited in a chamber (2) constituting a semiconductor production device that has formed a CVD film on a semiconductor wafer (12) by a CVD method, and the step of purging, after the step of etching the above CVD deposit film by a cleaning gas, a cleaning gas remaining in the chamber (2) by passing a hydrogen−containing gas through the chamber (2).
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Inventors:
MIZUSHIMA ICHIRO (JP)
Application Number:
PCT/JP2002/008742
Publication Date:
March 06, 2003
Filing Date:
August 29, 2002
Export Citation:
Assignee:
TOSHIBA KK (JP)
MIZUSHIMA ICHIRO (JP)
MIZUSHIMA ICHIRO (JP)
International Classes:
C23C16/44; H01L21/205; (IPC1-7): H01L21/205; C23C16/44
Foreign References:
| JPH06163485A | 1994-06-10 | |||
| JPH01152274A | 1989-06-14 | |||
| JPH05259133A | 1993-10-08 | |||
| US5963834A | 1999-10-05 | |||
| JPS6370428A | 1988-03-30 | |||
| JPH02190472A | 1990-07-26 | |||
| US5609721A | 1997-03-11 |
Attorney, Agent or Firm:
Suzuye, Takehiko c/o SUZUYE & SUZUYE 7-2 (Kasumigaseki 3-chome Chiyoda-ku, Tokyo, JP)
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