Title:
QUANTUM DOT LIGHT-EMITTING DIODE
Document Type and Number:
WIPO Patent Application WO/2020/063592
Kind Code:
A1
Abstract:
Disclosed is a quantum dot light-emitting diode, comprising a hole function layer arranged between an anode and a quantum dot light-emitting layer, wherein the hole function layer comprises a hole transport layer and a hole buffer layer; the hole transport layer is arranged close to the anode; the hole buffer layer is arranged close to the quantum dot light-emitting layer and comprises a first hole buffer sub-layer arranged affixed to the hole transport layer; and the material of the first hole buffer sub-layer is a first hole buffer material or a combined material composed of the first hole buffer material and a first hole transport material. The conductance of the first hole buffer material is less than 1 × 10-8 Sm-1, or, the hole mobility of the first hole buffer material is less than 1 × 10-6 cm2V-1s-1.
Inventors:
SU LIANG (CN)
XIE XIANGWEI (CN)
XIE XIANGWEI (CN)
Application Number:
PCT/CN2019/107552
Publication Date:
April 02, 2020
Filing Date:
September 24, 2019
Export Citation:
Assignee:
TCL CORP (CN)
International Classes:
H01L51/50; H01L33/00; H01L33/12
Foreign References:
| CN106816545A | 2017-06-09 | |||
| CN102231422A | 2011-11-02 | |||
| CN106601880A | 2017-04-26 | |||
| CN206040683U | 2017-03-22 | |||
| US20060145169A1 | 2006-07-06 |
Attorney, Agent or Firm:
JOHNSON INTELLECTUAL PROPERTY AGENCY(SHENZHEN) (CN)
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