RANGE SENSOR AND RANGE IMAGE SENSOR - HAMAMATSU PHOTONICS KK

Title:

RANGE SENSOR AND RANGE IMAGE SENSOR

Document Type and Number:

WIPO Patent Application WO/2012/049884

Kind Code:

A1

Abstract:

A rectangular photogate electrode (PG) has a first and a second long side (LS1, LS2) that have the planar shapes thereof facing one another, and a first and a second short side (SS1, SS2) that face one another. A first and a second semiconductor region (FD1, FD2) are positioned so as to face one another with the photogate electrode (PG) sandwiched therebetween in the direction that the first and second long sides (LS1, LS2) face one another. Third semiconductor regions (SR1) are positioned so as to face one another with the photogate electrode (PG) sandwiched therebetween in the direction that the first and second short sides (SS1, SS2) face one another. The third semiconductor regions (SR1) increase the potential on the first and second short sides (SS1, SS2) to a higher potential than the potential in the region directly under the photogate electrode (PG) and between the first and second semiconductor regions (FD1, FD2).

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Inventors:

MASE MITSUHITO (JP)
SUZUKI TAKASHI (JP)

Application Number:

PCT/JP2011/063844

Publication Date:

April 19, 2012

Filing Date:

June 16, 2011

Export Citation:

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Assignee:

HAMAMATSU PHOTONICS KK (JP)
MASE MITSUHITO (JP)
SUZUKI TAKASHI (JP)

International Classes:

H01L27/146; G01S7/4861; G01S17/89

Domestic Patent References:

WO2007026779A1

2007-03-08

Foreign References:

JP2009277738A

2009-11-26

Other References: