Title:
RESIST UNDERLAYER FILM FORMATION COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2022/138454
Kind Code:
A1
Abstract:
[Problem] The present invention addresses the problem of providing: a resist underlayer film formation composition exhibiting high etching resistance, a good dry etching speed ratio, and a good optical constant and being capable of forming a flat film that has good coverage even over a so-called multilevel substrate, that has a small difference in film thickness after embedding, and moreover has excellent hardness; a resist underlayer film using the resist underlayer film formation composition; and a production method for a semiconductor device. [Solution] Provided is a resist underlayer film formation composition including: the reaction product of the compound represented by formula (1) or formula (2) and the compound represented by formula (3); and a solvent.
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Inventors:
ENDO MASAHISA (JP)
HATTORI HAYATO (JP)
MITSUTAKE YUKI (JP)
NISHIMAKI HIROKAZU (JP)
HATTORI HAYATO (JP)
MITSUTAKE YUKI (JP)
NISHIMAKI HIROKAZU (JP)
Application Number:
PCT/JP2021/046575
Publication Date:
June 30, 2022
Filing Date:
December 16, 2021
Export Citation:
Assignee:
NISSAN CHEMICAL CORP (JP)
International Classes:
C08G10/02; C08G12/26; C08G16/02; G03F7/11; G03F7/20
Domestic Patent References:
| WO2010147155A1 | 2010-12-23 |
Foreign References:
| JP2013053217A | 2013-03-21 | |||
| JP2021071660A | 2021-05-06 |
Attorney, Agent or Firm:
HANABUSA PATENT & TRADEMARK OFFICE (JP)
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