Title:
SCHOTTKY BARRIER DIODE
Document Type and Number:
WIPO Patent Application WO/2024/047965
Kind Code:
A1
Abstract:
[Problem] To mitigate an electric field generated in a drift layer when a reverse voltage is applied to a Schottky barrier diode that uses a gallium oxide. [Solution] A Schottky barrier diode 1 comprises: a drift layer 30 and a semiconductor substrate 20 comprising a gallium oxide; and an anode electrode 40 and a cathode electrode 50. The drift layer 30 has an outer peripheral trench 32 surrounding the anode electrode 40 in a plan view. The outer peripheral trench 32 includes an inner peripheral wall 33, an outer peripheral wall 34, a bottom surface 35, an inner peripheral corner portion 36, and an outer peripheral corner portion 37. The inner peripheral wall 33 and the inner peripheral corner portion 36 are covered by the anode electrode 40 with an insulation film 60 interposed therebetween, and the outer peripheral corner portion 37 is covered by a semiconductor material 70 of a conductivity type which is opposite to that of the drift layer 30. As a result, when a reverse voltage is applied, the electric field generated around the inner peripheral corner portion 36 in the drift layer 30 is mitigated.
Inventors:
ARIMA JUN (JP)
FUJITA MINORU (JP)
KAWASAKI KATSUMI (JP)
HIRABAYASHI JUN (JP)
FUJITA MINORU (JP)
KAWASAKI KATSUMI (JP)
HIRABAYASHI JUN (JP)
Application Number:
PCT/JP2023/018393
Publication Date:
March 07, 2024
Filing Date:
May 17, 2023
Export Citation:
Assignee:
TDK CORP (JP)
International Classes:
H01L29/872; H01L29/06; H01L29/24; H01L29/47
Domestic Patent References:
| WO2015060441A1 | 2015-04-30 |
Foreign References:
| CN114171608A | 2022-03-11 | |||
| JP2022069742A | 2022-05-12 | |||
| JP2021097169A | 2021-06-24 |
Attorney, Agent or Firm:
WASHIZU Mitsuhiro et al. (JP)
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