Title:
SEMICONDUCTOR DEVICE AND DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/056117
Kind Code:
A1
Abstract:
This semiconductor device (100A) is provided with: a substrate (1); a first gate electrode (2) that is arranged on the substrate; a first gate insulating layer (3) that covers the first gate electrode; a first oxide semiconductor layer (4) that faces the first gate electrode, with the first gate insulating layer being interposed therebetween; a first source electrode (5) and a first drain electrode (6), which are electrically connected to the first oxide semiconductor layer; a second gate insulating layer (7) that covers the first oxide semiconductor layer; a second gate electrode (8) that faces the first oxide semiconductor layer, with the second gate insulating layer being interposed therebetween; a third gate insulating layer (9) that covers the second gate electrode; a second oxide semiconductor layer (10) that faces the second gate electrode, with the third gate insulating layer being interposed therebetween; and a second source electrode (11) and a second drain electrode (12), which are electrically connected to the second oxide semiconductor layer.
Inventors:
MATSUKIZONO HIROSHI
Application Number:
PCT/JP2017/032874
Publication Date:
March 29, 2018
Filing Date:
September 12, 2017
Export Citation:
Assignee:
SHARP KK (JP)
International Classes:
G09F9/30; H01L29/786
Domestic Patent References:
| WO2008023776A1 | 2008-02-28 |
Foreign References:
| JP2013138191A | 2013-07-11 | |||
| JP2011048339A | 2011-03-10 | |||
| JP2013183111A | 2013-09-12 |
Attorney, Agent or Firm:
OKUDA Seiji (JP)
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