Title:
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/051166
Kind Code:
A1
Abstract:
The present application provides a semiconductor device and a fabrication method therefor, and relates to the technical field of semiconductors. The method comprises: first providing a wide-band-gap substrate; then forming a wide-band-gap epitaxial layer on the wide-band-gap substrate; further forming a first gate-oxide layer on the side of the wide-band-gap epitaxial layer away from the wide-band-gap substrate, wherein the first gate-oxide layer is a silicon oxide layer doped with nitrogen and phosphorus; and finally forming a second gate-oxide layer on the side of the first gate-oxide layer away from the wide-band-gap substrate, wherein the second gate-oxide layer is a silicon oxide layer doped with nitrogen or an undoped silicon oxide layer. The semiconductor device and the fabrication method therefor provided in the present application have the advantages of reduced density of interface states and improved channel mobility.
Inventors:
PENG ZHIGAO (CN)
GU ZIKUN (CN)
GU ZIKUN (CN)
Application Number:
PCT/CN2023/088663
Publication Date:
March 14, 2024
Filing Date:
April 17, 2023
Export Citation:
Assignee:
HUNAN SANAN SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L29/06; H01L21/335; H01L29/10; H01L29/24; H01L29/772
Foreign References:
| CN115732538A | 2023-03-03 | |||
| CN114256065A | 2022-03-29 | |||
| US20140264382A1 | 2014-09-18 | |||
| CN113270482A | 2021-08-17 | |||
| CN114300533A | 2022-04-08 | |||
| CN111326573A | 2020-06-23 | |||
| US20160093494A1 | 2016-03-31 | |||
| US20160126092A1 | 2016-05-05 |
Attorney, Agent or Firm:
CHOFN INTELLECTUAL PROPERTY (CN)
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