Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/053456
Kind Code:
A1
Abstract:
Provided is a semiconductor device including: a gate electrode embedded in a gate trench; a surface insulating layer that is formed on a first principal surface and that has a contact hole; a covering insulating layer that covers the gate electrode in the gate trench and that insulates the gate electrode from a contact electrode; and an embedded body that is embedded in a region on the covering insulating layer in the gate trench and that has etching selectivity with respect to the surface insulating layer.
Inventors:
OI NOBUTAKA (JP)
Application Number:
PCT/JP2023/030989
Publication Date:
March 14, 2024
Filing Date:
August 28, 2023
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/78; H01L21/336; H01L29/12; H01L29/739
Domestic Patent References:
| WO2019103135A1 | 2019-05-31 |
Foreign References:
| JP2001160549A | 2001-06-12 | |||
| JP2003303967A | 2003-10-24 | |||
| JP2005116985A | 2005-04-28 | |||
| JP2019220727A | 2019-12-26 |
Attorney, Agent or Firm:
AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS (JP)
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