SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

WIPO Patent Application WO/2024/052773

A1

The present invention provides a transistor which enables the achievement of miniaturization. The present invention also provides a transistor which has good electrical characteristics. This semiconductor device comprises first to third conductive layers, first to third semiconductor layers, and first and second insulating layers. The second semiconductor layer is arranged on the first conductive layer; the first insulating layer is arranged on the second semiconductor layer; the second conductive layer is arranged on the first insulating layer; and the third semiconductor layer is arranged on the second conductive layer. The first insulating layer has an opening which reaches the second semiconductor layer. The first semiconductor layer has a portion that is in contact with the third semiconductor layer, a portion that is in contact with the lateral surface of the first insulating layer within the opening, and a portion that is in contact with the second semiconductor layer. The second insulating layer covers the first semiconductor layer. The third conductive layer overlaps with the first semiconductor layer, with the second insulating layer being interposed therebetween. The first to third semiconductor layers contain silicon. The second and third semiconductor layers contain a same impurity element. The first insulating layer contains hydrogen, nitrogen and silicon.

JINTYOU MASAMI
SHIMA YUKINORI
NAKADA MASATAKA
YOSHIZUMI KENSUKE (JP)

PCT/IB2023/058643

March 14, 2024

September 01, 2023

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SEMICONDUCTOR ENERGY LAB (JP)

H01L29/786; G02F1/1368; H01L21/8234; H01L27/06; H01L27/088; H10K50/10

JP2016149552A	2016-08-18
JPH03291973A	1991-12-24
JP2017167452A	2017-09-21
JP2016146422A	2016-08-12

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