Title:
SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/101202
Kind Code:
A1
Abstract:
Provided is, for example, a semiconductor device having high reliability. The semiconductor device comprises a semiconductor element and an electrode plate electrically connected to the semiconductor element. The rear surface of the electrode plate is bonded to a terminal serving as a conductive member via a bonding material having a thermosetting property. A recess is formed in a main surface of the electrode plate. The recess formed in the main surface of the electrode plate is separated from the bonding material.
Inventors:
FUJINO JUNJI (JP)
EGUSA MINORU (JP)
KAWAZOE CHIKA (JP)
YANO YUKI (JP)
EGUSA MINORU (JP)
KAWAZOE CHIKA (JP)
YANO YUKI (JP)
Application Number:
PCT/JP2023/039114
Publication Date:
May 16, 2024
Filing Date:
October 30, 2023
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L23/28; H01L23/48; H01L25/07; H01L25/18
Foreign References:
| JP2022103052A | 2022-07-07 | |||
| JP2020025027A | 2020-02-13 | |||
| JP2018500172A | 2018-01-11 | |||
| JP2008119729A | 2008-05-29 | |||
| JP2008305902A | 2008-12-18 | |||
| JPS62102595A | 1987-05-13 | |||
| JP2011258888A | 2011-12-22 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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