Title:
SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE, RAIL VEHICLE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2015/040675
Kind Code:
A1
Abstract:
The purpose of the present invention is to improve performance of a semiconductor device by eliminating an increase of a terminal region, and improving a withstand voltage. In order to achieve the purpose, a semiconductor chip terminal structure, wherein a width of a trench on the outer side of a semiconductor chip is smaller than a width of a trench on the center side of the semiconductor chip, is formed. Furthermore, in the structure, a trench well formed at the bottom surface of the trench on the outer side has a smaller depth and a lower impurity concentration compared with a trench well formed at the bottom surface of the trench on the center side.
Inventors:
MATSUSHIMA HIROYUKI (JP)
MOCHIZUKI KAZUHIRO (JP)
MOCHIZUKI KAZUHIRO (JP)
Application Number:
PCT/JP2013/075046
Publication Date:
March 26, 2015
Filing Date:
September 17, 2013
Export Citation:
Assignee:
HITACHI LTD (JP)
International Classes:
H01L29/06; H01L21/329; H01L29/861; H01L29/868
Domestic Patent References:
| WO2013114563A1 | 2013-08-08 | |||
| WO2013105350A1 | 2013-07-18 |
Foreign References:
| JP2012186318A | 2012-09-27 | |||
| JP2003101039A | 2003-04-04 | |||
| JP2011114028A | 2011-06-09 | |||
| JP2013038329A | 2013-02-21 | |||
| JP5122810B2 | 2013-01-16 | |||
| JP2009087973A | 2009-04-23 |
Attorney, Agent or Firm:
TSUTSUI, YAMATO (JP)
Tsutsui Daiwa (JP)
Tsutsui Daiwa (JP)
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