Title:
SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2021/258293
Kind Code:
A1
Abstract:
Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first layer and a second layer. The first layer is disposed on and in contact with the substrate. The first layer includes AlX1Ga (1-X1) N, wherein 0.5≤X1<1. The second layer is disposed on and in contact with the first layer. The second layer includes Al, Ga and N.
Inventors:
WU PENG-YI (CN)
Application Number:
PCT/CN2020/097752
Publication Date:
December 30, 2021
Filing Date:
June 23, 2020
Export Citation:
Assignee:
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD (CN)
International Classes:
H01L29/06; H01L21/335; H01L29/778
Foreign References:
| CN107464843A | 2017-12-12 | |||
| CN103972344A | 2014-08-06 | |||
| CN110767784A | 2020-02-07 | |||
| US20130099243A1 | 2013-04-25 |
Attorney, Agent or Firm:
IDEA INTELLECTUAL (SHENZHEN) IP AGENCY (CN)
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