Title:
SEMICONDUCTOR DEVICE, TFT SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND TFT SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2012/073862
Kind Code:
A1
Abstract:
This semiconductor device (100) is a semiconductor device provided with thin film transistors (10) and is provided with gate electrodes (12) for the thin film transistors (10), a gate insulating layer (13) formed on top of the gate electrodes (12), an oxide semiconductor layer (15) disposed on top of the gate insulating layer (13), and source electrodes (17) and drain electrodes (18) formed on top of the oxide semiconductor layer (15). When viewed perpendicular to the substrate surface of the semiconductor device (100), a source electrode (17) or drain electrode (18) covers at least one of a plurality of locations where the edge of a gate electrode (12) and the edge of the oxide semiconductor layer (15) intersect.
Inventors:
NAKAZAWA MAKOTO
Application Number:
PCT/JP2011/077322
Publication Date:
June 07, 2012
Filing Date:
November 28, 2011
Export Citation:
Assignee:
SHARP KK (JP)
NAKAZAWA MAKOTO
NAKAZAWA MAKOTO
International Classes:
H01L29/786; G02F1/1368; H01L21/28; H01L21/336; H01L29/41; H01L29/417; H05B33/02
Foreign References:
| JP2010266490A | 2010-11-25 | |||
| JP2010098305A | 2010-04-30 | |||
| JP2011216721A | 2011-10-27 | |||
| JP2010245118A | 2010-10-28 |
Attorney, Agent or Firm:
OKUDA SEIJI (JP)
Seiji Okuda (JP)
Seiji Okuda (JP)
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Claims: