Title:
SEMICONDUCTOR DEVICE USING SILVER NANOPARTICLES AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2015/005371
Kind Code:
A1
Abstract:
The objective of the present invention is to provide: a semiconductor device that has superior production efficiency and that has superior quality resulting from the high electrical conductivity, thermal conductivity, and the like of a circuit pattern and/or junction (junction between the circuit pattern and a semiconductor element); and a method for producing the semiconductor device. The semiconductor device has a semiconductor element, a circuit pattern, a substrate, and a protective material, and is characterized in that the circuit pattern and/or the junction between the circuit pattern and the semiconductor element is formed by means of sintering silver nanoparticles, and the silver nanoparticles are obtained by means of the thermal decomposition of a mixture containing an amine (A) having an amino group and an aliphatic hydrocarbon group and a silver compound (B).
Inventors:
IGUCHI YUKI (JP)
KODUMA HIROYOSHI (JP)
KODUMA HIROYOSHI (JP)
Application Number:
PCT/JP2014/068269
Publication Date:
January 15, 2015
Filing Date:
July 09, 2014
Export Citation:
Assignee:
DAICEL CORP (JP)
International Classes:
H01L21/52; B22F1/054; B22F9/30
Foreign References:
| JP2012207049A | 2012-10-25 | |||
| JP2011244016A | 2011-12-01 | |||
| JP2010073545A | 2010-04-02 | |||
| JP2007332259A | 2007-12-27 | |||
| JP2007208082A | 2007-08-16 |
Attorney, Agent or Firm:
GOTO, YUKIHISA (JP)
Yukihisa Goto (JP)
Yukihisa Goto (JP)
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