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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/084498
Kind Code:
A1
Abstract:
A vertical MOSFET includes: a semiconductor substrate comprising a drain layer, a drift layer, a body layer, and a source layer; and a trench gate penetrating through the source layer and the body layer from an upper surface of the semiconductor substrate and reaching the drift layer. The trench gate includes a gate electrode; a first insulating film disposed on a bottom surface of a trench formed in the semiconductor substrate; a second insulating film disposed at least on a side surface of the trench, and in contact with the body layer; and a third insulating film disposed between the gate electrode and the second insulating film, and formed of a material of which dielectric constant is higher than a dielectric constant of the second insulating film.

Inventors:
SOENO AKITAKA (JP)
YAMAMOTO TOSHIMASA (JP)
WATANABE YUKIHIKO (JP)
Application Number:
PCT/JP2012/007831
Publication Date:
June 13, 2013
Filing Date:
December 06, 2012
Export Citation:
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Assignee:
TOYOTA MOTOR CO LTD (JP)
DENSO CORP (JP)
SOENO AKITAKA (JP)
YAMAMOTO TOSHIMASA (JP)
WATANABE YUKIHIKO (JP)
International Classes:
H01L29/78; H01L29/51
Foreign References:
US20100006928A12010-01-14
JP2005252204A2005-09-15
US20020167046A12002-11-14
JP2005223255A2005-08-18
Other References:
J. ROBERTSON: "High dielectric constant oxides", THE EUROPEAN PHYSICAL JOURNAL APPLIED PHYSICS, vol. 28, no. 3, 1 December 2004 (2004-12-01), pages 265 - 291, XP055054404, ISSN: 1286-0042, DOI: 10.1051/epjap:2004206
Attorney, Agent or Firm:
KAI-U PATENT LAW FIRM (45-14 Meieki 2-chome, Nakamura-ku, Nagoya-sh, Aichi 02, JP)
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Claims:



 
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