Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/063681
Kind Code:
A1
Abstract:
In order to maintain short-circuit capacity while improving the tradeoff between on-state voltage and turn-off loss, the provided semiconductor device is equipped with an IGBT element, a super-junction transistor element connected in parallel to the IGBT element, and a limiting unit for limiting the voltage to be imparted to the gate terminal of the IGBT element relative to the voltage to be imparted to the gate terminal of the super-junction transistor element.
Inventors:
NAITO TATSUYA (JP)
OTSUKI MASAHITO (JP)
OTSUKI MASAHITO (JP)
Application Number:
PCT/JP2015/077318
Publication Date:
April 28, 2016
Filing Date:
September 28, 2015
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H01L27/088; H01L29/06; H01L29/78; H02M1/00; H02M1/08; H03K17/08
Foreign References:
| JP2006344779A | 2006-12-21 | |||
| JP2014130909A | 2014-07-10 | |||
| JP2013125806A | 2013-06-24 | |||
| JP2012253202A | 2012-12-20 | |||
| JPH04354156A | 1992-12-08 |
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
Ryuka international patent business corporation (JP)
Ryuka international patent business corporation (JP)
Download PDF:
Previous Patent: POLYESTER RESIN COMPOSITION
Next Patent: ENDOSCOPE INSERTION SHAPE OBSERVATION DEVICE
Next Patent: ENDOSCOPE INSERTION SHAPE OBSERVATION DEVICE