Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/187477
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide technology capable of suppressing electric field concentration in a first P type semiconductor layer during recovery operation. A semiconductor device is provided with: a drift layer; an N type semiconductor layer and the first P type semiconductor layer; a second P type semiconductor layer; an electrode; and an insulating layer. The N type semiconductor layer and the first P type semiconductor layer are disposed below the drift layer in a state adjacent to each other in the transverse direction. The insulating layer is disposed on the first P type semiconductor layer in a state of contact with the second P type semiconductor layer and the electrode.
Inventors:
NISHII AKITO (JP)
Application Number:
PCT/JP2016/062898
Publication Date:
November 02, 2017
Filing Date:
April 25, 2016
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L29/861; H01L21/336; H01L29/739; H01L29/78; H01L29/868
Foreign References:
| JP2012059734A | 2012-03-22 | |||
| JP2013065735A | 2013-04-11 | |||
| JP2013201360A | 2013-10-03 | |||
| JPH10326900A | 1998-12-08 | |||
| JP2012043891A | 2012-03-01 | |||
| JP2005354031A | 2005-12-22 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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